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Due to the large surface-to-volume ratio, surface trap states play a dominantrole in the optoelectronic properties of nanoscale devices(1-6). Understandingthe surface trap states allows us to properly engineer the device surfaces forbetter performance. But characterization of surface trap states at nanoscalehas been a formidable challenge using the traditional capacitive techniquesbased on metal-insulator-semiconductor (MIS) structures(7) and deep leveltransient spectroscopy (DLTS)(8-11). Here, we demonstrate a simple but powerfuloptoelectronic method to probe the density of nanowire surface trap states tothe limit of a single trap state. Unlike traditional capacitive techniques(Fig1a), in this method we choose to tune the quasi-Fermi level across thebandgap of a silicon nanowire photoconductor, allowing for capture and emissionof photogenerated charge carriers by surface trap states (Fig1b). Theexperimental data show that the energy density of nanowire surface trap statesis in a range from 10^9cm^-2/eV at deep levels to 10^12cm^-2/eV in the middleof the upper half bandgap. This optoelectronic method allows us to convenientlyprobe trap states of ultra-scaled nano/quantum devices at extremely highprecision.

Optoelectronically probing the density of nanowire surface trap states to the single state limit