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A film-coupled metamaterial structure is numerically investigated forenhancing the light absorption in an ultrathin photovoltaic layer ofcrystalline gallium arsenide (GaAs). The top subwavelength concave grating andthe bottom metallic film could not only effectively trap light with the help ofwave interference and magnetic resonance effects excited above the bandgap, butalso practically serve as electrical contacts for photon-generated chargecollection. The energy absorbed by the active layer is greatly enhanced in thefilm-coupled metamaterial structure, resulting in significant enhancement onthe short-circuit current density by three times over a free-standing GaAslayer at the same thickness. The results would facilitate the development ofnext-generation ultrathin solar cells with lower cost and higher efficiency.

Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures