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We explore ballistic regime quantum transport characteristics ofoxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scaleempirical pseudopotential electronic structure framework, coupled to theKubo-Greenwood transport analysis. A real-space wave function study isundertaken and the outcomes are interpreted together with the findings ofballistic transport calculations. This reveals that ballistic transport edgelies tens to hundreds of millielectron volts above the lowest unoccupiedmolecular orbital, with a substantial number of localized states appearing inbetween, as well as above the former. We show that these localized states arenot due to the oxide interface, but rather core silicon-derived. They manifestthe wave nature of electrons brought to foreground by the reflectionsoriginating from NW junctions and bends. Hence, we show that the crossings andkinks of even ultraclean Si NWs possess a conduction band tail without arecourse to atomistic disorder.

Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires