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Nanostructures fabricated from narrow-gap semiconductors with strongspin-orbit interaction (SOI), such as InAs, can be used to filter momentummodes of electrons and offer the possibility to create and detectspin-polarized currents entirely by electric fields. Here, we presentmagnetotransport and THz magnetospectroscopy investigations of Hall-bars withback-gates made from in InGaAs/InAlAs quantum well structures with a strained 4nm InAs inserted channel. The two-dimensional electron gas is at 53 nm depthand has a carrier density of about $6\times10^{11}$ cm$^{-2}$ and mobility ofabout $2\times10^{5}$ cm$^2$/Vs, after illumination. Electrical and THz opticaltransport measurements at low temperatures and in high magnetic fields revealan effective mass of 0.038$m_{0}$ and an anisotropic $g$-factor of up to 20,larger than for bulk InAs or InAs-based heterostructures. We demonstrate thatquasi-one-dimensional channels can be formed by micro-laser lithography. Thepopulation of subbands is controlled by in-plane gates. Contrary to previousreports symmetric and asymmetric in-plane gate voltages applied to quasi-onedimensional channels did not show indications of SOI-induced anomalies in theconductance.

Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures