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Modern electronic devices utilize charge to transmit and store information.This leaves the information susceptible to external influences, such asradiation, that can introduce short timescale charge fluctuations and, longterm, degrade electronic properties. Encoding information as spin polarizationsoffers an attractive alternative to electronic logic that should be robust torandomly polarized transient radiation effects. As a preliminary step towardsradiation-resistant spintronic devices, we measure the spin properties ofn-GaAs as a function of radiation fluence using time-resolved Kerr rotation andphotoluminescence spectroscopy. Our results show a modest to negligible changein the long-term electron spin properties up to a fluence of 1x10$^{14}$ (5 MeVprotons)/cm$^2$, even as the luminescence decreases by two orders of magnitude.

Robustness of n-GaAs Carrier Spin Properties to 5 MeV Proton Irradiation