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The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAsheterostructures with Mn deluted in GaAs cover layers and with atomicallycontrolled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm)in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have beeninvestigated. The mass magnetization all of the samples ofGaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of themagnetic field that pointed out on the presence of low-dimensionalferromagnetism in the manganese depletion layer of GaAs based structures. Ithas been estimated the manganese content threshold at which the ferromagneticordering was found.

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese