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Thermochromic VO2 films were prepared by reactive DC magnetron sputteringonto heated sapphire substrates and were used to make 100-nm-thick samples thatwere 10 {\mu}m wide and 100 micron long. The resistance of these sampleschanged by a factor of about 2000 in the 50 < Ts < 70 C range of temperature Tsaround the "critical" temperature Tc between a low-temperature semiconductingphase and a high-temperature metallic-like phase of VO2. Power density spectraS(f) were extracted for resistance noise around Tc and demonstrated unambiguous1/f behavior. Data on S(10Hz)/Rs^2 scaled as Rs^x, where Rs is sampleresistance; the noise exponent x was -2.6 for Ts < Tc and +2.6 for Ts > Tc.These exponents can be reconciled with the Pennetta-Trefan-Reggiani theory [C.Pennetta, G. Trefanan, and L. Reggiani, Phys. Rev. Lett. 85, 5238 (2000)] forlattice percolation with switching disorder ensuing from random defectgeneration and healing in steady state. Our work hence highlights the dynamicfeatures of the percolating semiconducting and metallic-like regions around Tcin thermochromic VO2 films.

Resistance noise at the metal-insulator transition in thermochromic VO2 films