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We demonstrate hydrogen assisted growth of high quality epitaxial graphene onthe C-face of 4H-SiC. Compared with the conventional thermal decompositiontechnique, the size of the growth domain by this method is substantiallyincreased and the thickness variation is reduced. Based on the morphology ofepitaxial graphene, the role of hydrogen is revealed. It is found that hydrogenacts as a carbon etchant. It suppresses the defect formation and nucleation ofgraphene. It also improves the kinetics of carbon atoms via hydrocarbonspecies. These effects lead to increase of the domain size and the structurequality. The consequent capping effect results in smooth surface morphology andsuppression of multilayer growth. Our method provides a viable route to finetune the growth kinetics of epitaxial graphene on SiC.

Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC