English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report a Raman spectroscopy study of graphene field-effect transistors(GFET) with a controlled amount of defects introduced in graphene by exposureto electron-beam irradiation. Raman spectra are taken at T = 8 K over a rangeof back gate voltages (Vg) for various irradiation dosages (Re). We studyeffects in the Raman spectra due to Vg-induced doping and artificially createddisorder at various Re. With moderate disorder (irradiation), the Raman G peakwith respect to the graphene carrier density (nFE) exhibits a minimum in peakfrequency and a maximum in peak width near the charge- neutral point (CNP).These trends are similar to those seen in previous works on pristine grapheneand have been attributed to a reduction of electron-phonon coupling strength(D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP.We also observe a maximum in I2D/IG and weak maximum in ID/IG near the CNP. Allthe observed dependences of Raman parameters on nFE weaken at stronger disorder(higher Re), implying that disorder causes a reduction of D as well. Ourfindings are valuable for understanding Raman spectra and electron-phononphysics in doped and disordered graphene.

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping