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We report electrical spin injection and detection in degenerately dopedn-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spininjection and detection. The whole structure is integrated on a Si wafer forcomplementary metal-oxide-semiconductor compatibility. From three-terminalHanle-effect measurements, we observe a spin accumulation up to 10 K. The spinlifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and thespin diffusion length is estimated to be 367 nm due to the high diffusioncoefficient of the highly doped Ge channel.

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si