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We investigate the electric field tuning of the phonon-assisted hole spinrelaxation in single self-assembled In$_{1-x}$Ga$_{x}$As/GaAs quantum dots,using an atomistic empirical pseudopotential method. We find that the electricfield along the growth direction can tune the hole spin relaxation time formore than one order of magnitude. The electric field can prolong or shorten thehole spin lifetime and the tuning shows an asymmetry in terms of the fielddirection. The asymmetry is more pronounced for the taller the dot. The resultsshow that the electric field is an effective way to tune the holespin-relaxation in self-assembled QDs.

Tuning of the hole spin relaxation time in single self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots by electric field