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Based on the parameters from published ab-inito theoretical and experimentalstudies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC)simulations, a framework of multi-scale modeling is developed to investigatethe long-term evolution of displacement damage induced by heavy-ion irradiationin cubic silicon carbide. The isochronal annealing after heavy ion irradiationis simulated, and the annealing behaviors of total interstitials are foundconsistent with previous experiments. Two annealing stages below 600K and onestage above 900K are identified. The mechanisms for those recovery stages areinterpreted by the evolution of defects. The influence of the spatialcorrelation in primary damage on defect recovery has been studied and foundinsignificant when the damage dose is high enough, which sheds light on theapplicability of approaches with mean-field approximation to the long-termevolution of damage by heavy ions in SiC.

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation