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We report the growth temperature dependence of the properties of thegroup-IV-based ferromagnetic semiconductor Ge1-xFex films (x = 6.5% and 10.5%),including the lattice constant, Curie temperature (TC), and Fe-atom locations.While TC strongly depends on the growth temperature, we find a universalrelationship between TC and the lattice constant, which does not depend on theFe content x. By using the channeling Rutherford backscattering andparticle-induced X-ray emission measurements, it is clarified that about 15% ofthe Fe atoms exist in the tetrahedral interstitial sites in the Ge0.935Fe0.065lattice and that the substitutional Fe concentration is not correlated with TC.Considering these results, we suggest that the non-uniformity of the Feconcentration plays an important role in determining the ferromagneticproperties of GeFe.

journal of applied physics

Properties of group-IV-based ferromagnetic semiconductor GeFe: Growth  temperature dependence, lattice constant, location of Fe atoms, and their  relevance to the magnetic properties