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Transient reflectivity (TR) from thin films (6 - 40 nm thick) of thetopological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggestthe existence of both radiative and non-radiative recombination betweenelectrons residing in the upper cone of initially unoccupied high energy Diracsurface states (SS) and holes residing in the lower cone of occupied low energyDirac SS. The modeling of measured TR traces allowed us to conclude thatrecombination is induced by the depletion of bulk electrons in films below ~20nm thick due to the charge captured on the surface defects. We predict thatsuch recombination processes can be observed using time-resolvedphotoluminescence techniques.

Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3