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We have investigated the thermoelectric properties of the novel layeredbismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Seproduced the enhancement of electrical conductivity (metallic characteristics)in LaOBiS2-xSex. The power factor largely increased with increasing Seconcentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. Cfor LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 ataround 470 deg. C in LaOBiS1.2Se0.8.

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex