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The conduction mechanisms and trapping effects at SiO2/4H-SiC interfaces in metal-oxidesemiconductorfield effect transistors (MOSFETs) were studied by Fowler-Nordheim (FN) tunnellingand frequency dependent conductance measurements. In particular, the analysis of both MOScapacitors and MOSFETs fabricated on the same wafer revealed an anomalous FN behavior onp-type implanted SiC/SiO2 interfaces. The observed FN instability upon subsequent voltage sweepswas correlated to the charge-discharge of hole trap states close the valence band edge of 4H-SiC.The charge-discharge of these traps also explained the recoverable threshold voltage instabilityobserved in lateral MOSFET

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors