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The time-resolved reflectivity measurements were carried out on theinterfacial phase change memory (iPCM) materials([(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{4}$]$_{8}$ and[(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{1}$]$_{20}$) as well as conventionalGe$_{2}$Sb$_{2}$Te$_{5}$ alloy at room temperature and above the RESET-SETphase transition temperature. In the high-temperature phase, coherent phononswere clearly observed in the iPCM samples while drastic attenuation of coherentphonons was induced in the alloy. This difference strongly suggests the atomicrearrangement during the phase transition in iPCMs is much smaller than that inthe alloy. These results are consistent with the unique phase transition modelin which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs anda conventional amorphous-crystalline phase transition takes place for thealloy.

Coherent phonon study of (GeTe)$_{l}$(Sb$_{2}$Te$_{3}$)$_{m}$ interfacial phase change memory materials