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In this work, we investigate thermoelectric properties of junctionsconsisting of two partially overlapped graphene sheets coupled to each other inthe cross-plane direction. It is shown that because of the weak van-der Waalsinteractions between graphene layers, the phonon conductance in these junctionsis strongly reduced, compared to that of single graphene layer structures,while their electrical performance is weakly affected. By exploiting thiseffect, we demonstrate that the thermoelectric figure of merit can reach valueshigher than 1 at room temperature in junctions made of gapped graphenematerials, for instance, graphene nanoribbons and graphene nanomeshes. Thedependence of thermoelectric properties on the junction length is alsodiscussed. This theoretical study hence suggests an efficient way to enhancethermoelectric efficiency of graphene devices.

Enhanced thermoelectric figure of merit in vertical graphene junctions