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We observed qualitatively dissimilar frequency dependence of negativecapacitive response under high charge injection in two sets of junction diodeswhich are functionally different from each other i.e. electroluminescent diodesand non-luminescent Si-based diodes. Using the technique of bias-activateddifferential capacitance response, we investigated the mutual dynamics ofdifferent rate processes in different diodes. We explain these observations asthe mutual competition of fast and slow electronic transition rates albeitdifferently. This study provides a better understanding of the physics ofjunction diodes operating under high charge carrier injection and may lead tosuperior device functionalities.

Dynamic frequency dependence of bias activated negative capacitance in semiconductor diodes under high forward bias