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We develop a semianalytical model for monolayer graphene field-effecttransistors in the ballistic limit. Two types of devices are considered: in thefirst device, the source and drain regions are doped by charge transfer withSchottky contacts, while, in the second device, the source and drain regionsare doped electrostatically by a back gate. The model captures two importanteffects that influence the operation of both devices: (i) the finite density ofstates in the source and drain regions, which limits the number of statesavailable for transport and can be responsible for negative output differentialresistance effects, and (ii) quantum tunneling across the potential steps atthe source-channel and drain-channel interfaces. By comparison with aself-consistent non-equilibrium Green's function solver, we show that our modelprovides very accurate results for both types of devices, in the bias region ofquasi-saturation as well as in that of negative differential resistance.

Semianalytical quantum model for graphene field-effect transistors