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The thermal properties of amorphous and crystalline phases in chalcogenidephase change materials (PCM) play a key role in device performance fornon-volatile random-access memory. Here, we report the nanothermal morphologyof amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thinfilms by scanning thermal microscopy (SThM). By performing SThM measurementsand applying quantitative physical models to two film thicknesses, the PCMthermal conductivities and thermal boundary conductances between the PCM andSThM probe are independently estimated for the amorphous and crystalline phaseof each stoichiometry.

Nanothermal Characterization of Amorphous and Crystalline Phases in Chalcogenide Thin Films with Scanning Thermal Microscopy