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Graphene-based vertical field effect transistors have attracted considerableattention in the light of realizing high-speed switching devices; however, thefunctionality of such devices has been limited by either their small ON-OFFcurrent ratios or ON current densities. We fabricate a graphene/MoS2/metalvertical heterostructure by using mechanical exfoliation and dry transfer ofgraphene and MoS2 layers. The van der Waals interface between graphene and MoS2exhibits a Schottky barrier, thus enabling the possibility of well-definedcurrent rectification. The height of the Schottky barrier can be stronglymodulated by an external gate electric field owing to the small density ofstates of graphene. We obtain large current modulation exceeding 10^5simultaneously with a large current density of ~10^4 A/cm^2 , therebydemonstrating the superior performance of the exfoliated-graphene/MoS2/metalvertical field effect transistor

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures