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Method for determining the magnetic susceptibility in the high dopedsemiconductors is considered. A procedure that is based on double integrationof the positive part of the derivative of the absorption line having a Dysonshape and takes into account the depth of the skin layer is described. Analysisis made for the example of arsenic doped germanium samples at a rather highconcentration corresponding to the insulator metal phase transition.

Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance