English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We study the resistivity scaling in nanometer-sized metallic wires due tosurface roughness and grain-boundaries, currently the main cause of electronscattering in nanoscaled interconnects. The resistivity has been obtained withthe Boltzmann transport equation, adopting the relaxation time approximation(RTA) of the distribution function and the effective mass approximation for theconducting electrons. The relaxation times are calculated exactly, usingFermi's golden rule, resulting in a correct relaxation time for every sub-bandstate contributing to the transport. In general, the relaxation time stronglydepends on the sub-band state, something that remained unclear with the methodsof previous work. The resistivity scaling is obtained for different roughnessand grain-boundary properties, showing large differences in scaling behaviorand relaxation times. Our model clearly indicates that the resistivity isdominated by grain-boundary scattering, easily surpassing the surface roughnesscontribution by a factor of 10.

Resistivity scaling and electron relaxation times in metallic nanowires