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We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VIsemiconductor) is directly influenced by the periodicity of its intrinsicdefect structures. Specimens with periodic and semi-periodic two-dimensionalvacancy structures become amorphous around 10-11 GPa in contrast to those withaperiodic structures, which amorphize around 7-8 GPa. The result is a notableinstance of altering material phase-change properties via rearrangement ofstoichiometric vacancies as opposed to adjusting their concentrations. Based onour experimental findings, we posit that periodic two-dimensional vacancystructures in Ga2SeTe2 provide an energetically preferred crystal lattice thatis less prone to collapse under applied pressure. This is corroborated throughfirst-principles electronic structure calculations, which demonstrate that theenergy stability of III-VI structures under hydrostatic pressure is highlydependent on the configuration of intrinsic vacancies.

The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy