English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Thermal atomic layer deposition was used to form ultra-thin interlayers in metal/interlayer/ semiconductor Ohmic contacts on n-type and p-type Si. AlOx of thickness 1–2 nm was deposited at 120 °C on Si substrates prior to metallization, forming Ni/AlOx/Si contacts. Conductivity improved by two orders of magnitude but the contacts remained rectifying. When they were annealed at 200 °C, the conductivity increased by another order of magnitude and the samples became Ohmic. A minimum specific contact resistivity of 1.5 × 10−4 Ω-cm2 was obtained for structures based on lightly doped (1015 cm−3) Si substrates. Existing models that describe Fermi level de-pinning do not fully explain our results, which are however consistent with other experimental data in the literature.

Improving metal/semiconductor conductivity using AlOx interlayers on n-type and p-type Si