English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The Mn$_3$Ga Heusler compound and related alloys are the most promisingmaterials for the realization of spin-transfer-torque switching in magnetotunneling junctions. Improved performance can be achieved by high qualityinterfaces in these multilayered structured devices. In this context, theinterface between Mn$_{1.63}$Ga and MgO is of particular interest because ofits spin polarization properties in tunneling junctions. We performed achemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-rayphotoelectron spectroscopy (HAXPES). The experiment indicated the formation ofGa-O bonds at the interface and evidenced changes in the local environment ofMn atoms in the proximity of the MgO film. In addition, we show that theinsertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film stronglysuppresses the oxidation of gallium.

Investigation on Mn$_{3-\delta}$Ga/MgO interface for magnetic tunneling junctions