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Key to future spintronics and spin-based information processing technologiesis the generation, manipulation, and detection of spin polarization in a solidstate platform. Here, we theoretically explore an alternative route to spininjection via the use of dynamically polarized nitrogen-vacancy (NV) centers indiamond. We focus on the geometry where carriers and NV centers are confined toproximate, parallel layers and use a 'trap-and-release' model to calculate thespin cross-relaxation probabilities between the charge carriers and neighboringNV centers. We identify near-unity regimes of carrier polarization depending onthe NV spin state, applied magnetic field, and carrier g-factor. In particular,we find that unlike holes, electron spins are distinctively robust againstspin-lattice relaxation by other, unpolarized paramagnetic centers. Further,the polarization process is only weakly dependent on the carrier hoppingdynamics, which makes this approach potentially applicable over a broad rangeof temperatures.

Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities