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An efficient electrical spin injection into an InGaAs/GaAs quantum well lightemitting diode is demonstrated thanks to a CoFeB/MgO spin injector. Thetextured MgO tunnel barrier is fabricated by two different techniques:sputtering and molecular beam epitaxy (MBE). The maximal spin injectionefficiency is comparable for both methods. Additionally, the effect ofannealing is also investigated for the two types of samples. Both samples showthe same trend: an increase of the electroluminescence circular polarization(Pc) with the increase of annealing temperature, followed by a saturation of Pcbeyond 350{\deg}C annealing. Since the increase of Pc starts well below thecrystallization temperature of the full CoFeB bulk layer, this trend could bemainly due to an improvement of chemical structure at the top CoFeB/MgOinterface. This study reveals that the control of CoFeB/MgO interface isessential important for an optimal spin injection into semiconductor.

applied physics letters

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison  between MgO tunnel barriers grown by sputtering and molecular beam epitaxy  methods