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We present a fast method to fabricate high quality heterostructure devices bypicking up crystals of arbitrary sizes. Bilayer graphene is encapsulated withhexagonal boron nitride to demonstrate this approach, showing good electronicquality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. Thismethod provides a strong and useful tool for the fabrication of future highquality layered crystal devices.

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride