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Ferroelectric devices use their electric polarization ferroic order as theswitching and storage physical quantity for memory applications. However,additional built-in physical quantities and memory paradigms are requested forapplications. We propose here to take advantage of the multiferroic propertiesof ferroelectrics, using ferroelasticity to create a remnant strain, persistingafter stressing the material by converse piezoelectricity means. While largeelectric fields are needed to switch the polarization, here writing occurs atsubcoercive much lower field values, which can efficiently imprint multipleremnant strain states. A proof-of-principle device, with the simplest andnon-optimized resistance strain detection design, is shown here to exhibit13-memory states of high reproducibility and reliability. The relatedadvantages in lower power consumption and limited device fatigue make ourapproach relevant for applications.

Subcoercive and multilevel ferroelastic remnant states with resistive readout