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Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structuresbut generates electron traps in the compounds, degrading the electron mobility.To assess whether the latter is linked to the oxygen affinity or the ionicradius, of the X element, several IXZO samples are synthesized by the sol-gelprocess, with a large number (14) of X elements. The IXZOs are characterized byXPS, SIMS, DRX, and UV-spectroscopy and used for fabricating thin filmtransistors. Channel mobility and the interface defect density NST, extractedfrom the TFT electrical characteristics and low frequency noise, followed anincreasing trend and the values of mobility and NST are linked by anexponential relation. The highest mobility (8.5 cm2/Vs) is obtained inIn-Ga-Zn-O, and slightly lower value for Sb and Sn-doped IXZOs, with NST isabout 2E12 cm2/eV, close to that of the In-Zn-O reference TFT. This isexplained by a higher electronegativity of Ga, Sb, and Sn than Zn and In, theirionic radius values being close to that of In and Zn. Consequently, Ga, Sb, andSn induce weaker perturbations of In-O and Zn-O sequences in the sol-gelprocess, than the X elements having lower electronegativity and different ionicradius. The TFTs with X = Ca, Al, Ni and Cu exhibited the lowest mobility andNST > 1E13 cm2/eV, most likely because of metallic or oxide clusters formation.

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors