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GaAsPN layers with a thickness of 30nm were grown on GaP substrates withmetalorganic vapor phase epitaxy to study the feasibility of a single X-raydiffraction (XRD) measurement for full composition determination of quaternarylayer material. The method is based on the peak intensity of a quasi-forbidden(002) reflection which is shown to vary with changing arsenic content forGaAsPN. The method works for thin films with a wide range of arsenic contentsand shows a clear variation in the reflection intensity as a function ofchanging layer composition. The obtained thicknesses and compositions of thegrown layers are compared with accurate reference values obtained by Rutherfordbackscattering spectroscopy combined with nuclear reaction analysismeasurements. Based on the comparison, the error in the XRD defined materialcomposition becomes larger with increasing nitrogen content and layerthickness. This suggests that the dominating error source is the deterioratedcrystal quality due to the nonsubstitutional incorporation of nitrogen into thecrystal lattice and strain relaxation. The results reveal that the methodoverestimates the arsenic and nitrogen content within error margins of about0.12 and about 0.025, respectively.

Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection