English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The CoFe thickness (t(CoFe)) dependence of spin injection efficiency was investigated for Co2MnSi/CoFe/n-GaAs junctions. The Delta V-NL/I value, which is a measure of spin injection efficiency, strongly depended on t(CoFe), where Delta V-NL is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of Delta V-NL/I for a Co2MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co2MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co2MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co2MnSi/n-GaAs junction. (C) 2014 AIP Publishing LLC

Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties