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We consider theoretically the electronic structure of quasi-two andquasi-one-dimensional heterostructures comprised of III-V and II-VIsemiconductors such as InAs/GaInSb and HgCdTe. We show that not only aDirac-like dispersion exists in these materials when the energy gap approacheszero, but that the states with opposite momentum are orthogonal (i.e. can bedescribed by a pseudo-spin), which suppresses backscattering and therebyenhances the electron mobility, by analogy with the case of graphene. However,unlike in graphene, a quasi-one-dimensional quantum wire with zero gap can berealized, which should eliminate most of the scattering processes and lead tolong coherence lengths required for both conventional and ballistic electronicdevices.

Electronic states, pseudo-spin, and transport in the zinc-blende quantum wells and wires with vanishing band gap