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We present a method to map the saturation magnetization of soft ultrathinfilms with perpendicular anisotropy, and we illustrate it to assess thecompositional dependence of the magnetization of CoFeB(1 nm)/MgO films. Themethod relies on the measurement of the dipolar repulsion of parallel domainwalls that define a linear domain. The film magnetization is linked to thefield compressibility of the domain. The method also yields the minimaldistance between two walls before their merging, which sets a practical limitto the storage density in spintronic devices using domain walls as storageentities.

Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy