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We report on a combined theoretical and experimental determination of theFermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and$x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometricmeasurements the real part of the frequency-dependent conductivity isdetermined. An electronic model in the framework of the effective bond-orbitalmodel is parameterized in order to theoretically reproduce the measuredtransport properties. Predictions for the long-wavelength behaviour as afunction of the Fermi level are made. The corresponding density of statesobtained in this model is in qualitative agreement with first-principlecalculations. The absence of a significant experimental peak in the ACconductivity for small frequencies indicates that the Fermi level lies in a gapbetween two Mn-related impurity bands in the host band gap.

Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films