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We report on electrostatic screening of polarization-induced internalelectric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaNnanodiscs embedded between AlN barriers. The incorporation of Germanium atconcentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescenceemission energy of GaN nanodiscs to higher energies accompanied by a decreaseof the photoluminescence decay time. At the same time, the thickness-dependentshift in emission energy is significantly reduced. In spite of the high donorconcentration a degradation of the photoluminescence properties is notobserved.

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping