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We perform correlated studies of individual GaN nanowires in scanningelectron microscopy combined to low temperature cathodoluminescence,microphotoluminescence, and scanning transmission electron microscopy. We showthat some nanowires exhibit well localized regions emitting light at the energyof a stacking fault bound exciton (3.42 eV) and are able to observe thepresence of a single stacking fault in these regions. Precise measurements ofthe cathodoluminescence signal in the vicinity of the stacking fault giveaccess to the exciton diffusion length near this location.

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires