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Synthetic diamond production is key to the development of quantum metrologyand quantum information applications of diamond. The major quantum sensor andqubit candidate in diamond is the nitrogen-vacancy (NV) color center. Thislattice defect comes in four different crystallographic orientations leading toan intrinsic inhomogeneity among NV centers that is undesirable in someapplications. Here, we report a microwave plasma-assisted chemical vapordecomposition (MPCVD) diamond growth technique on (111)-oriented substratesthat yields perfect alignment ($94\pm2%$) of as-grown NV centers along a singlecrystallographic direction. In addition, clear evidence is found that themajority ($74\pm4%$) of the aligned NV centers were formed by the nitrogenbeing first included in the (111) growth surface and then followed by theformation of a neighboring vacancy on top. The achieved homogeneity of thegrown NV centers will tremendously benefit quantum information and metrologyapplications.

Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces