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Nonlinear screening of electric depolarization fields, generated by a stripedomain structure in a ferroelectric grain of a polycrystalline material, isstudied within a semiconductor model of ferroelectrics. It is shown that themaximum strength of local depolarization fields is rather determined by theelectronic band gap than by the spontaneous polarization magnitude.Furthermore, field screening due to electronic band bending and due to presenceof intrinsic defects leads to asymmetric space charge regions near the grainboundary, which produce an effective dipole layer at the surface of the grain.This results in the formation of a potential difference between the grainsurface and its interior of the order of 1 V, which can be of either signdepending on defect transition levels and concentrations. Exemplary acceptordoping of BaTiO3 is shown to allow tuning of the said surface potential in theregion between 0.1 and 1.3 V.

Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields