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We demonstrate a considerable suppression of the low-field leakage through aY2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atmduring post-deposition annealing (HP-PDA). Consequently, the quantumcapacitance measurement for the monolayer graphene reveals the largest Fermienergy modulation (EF = ~0.52 eV, i.e., the carrier density of ~2*10^13 cm^-2)in the solid-state topgate insulators reported so far. HP-PDA is the robustmethod to improve the electrical quality of high-k insulators on graphene.

Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators