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We have investigated the high-temperature thermoelectric properties of thelayered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed ananomalous behavior; a metal-semiconductor transition was observed around 270 K.It was found that the value of the electrical resistivity decreased with Fsubstitution. The Seebeck coefficient decreased with increasing Fconcentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained forLaOBiS2.

High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2