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With nearly complete spin polarization, the ferromagnetic semiconductoreuropium monoxide could enable next-generation spintronic devices by providingefficient ohmic spin injection into silicon. Spin injection is greatly affectedby the quality of the interface between the injector and silicon. Here, we useatomic-resolution scanning transmission electron microscopy in conjunction withelectron energy loss spectroscopy to directly image and chemically characterizea series of EuO|Si and EuO|YAlO3 interfaces fabricated using different growthconditions. We identify the presence of europium silicides and regions ofdisorder at the EuO|Si interfaces, imperfections that could significantlyreduce spin injection efficiencies via spin-flip scattering.

Hetero-epitaxial EuO Interfaces Studied by Analytic Electron Microscopy