English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te)n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs)using full-band ballistic non-equilibrium Green's function simulations with anatomistic tight-binding Hamiltonian with hopping potentials obtained fromdensity functional theory. We discuss the subthreshold slope, drain-inducedbarrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) fordifferent monolayer MX2 MOSFETs. We also report the possibility of negativedifferential resistance behavior in the output characteristics of nanoscalemonolayer MX2 MOSFETs.

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs