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Using density functional theory, we present a comparative study of theelectronic properties of BN-doped graphene monolayer, bilayer, trilayer, andmultilayer systems. In addition, we address a superlattice of pristine andBN-doped graphene. Five doping concentrations between 12.5% and 75% areconsidered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show thatthe effective mass varies between 0.007 and 0.209 free electron masses,resembling a high mobility of the charge carriers.

Band gap tunning in BN-doped graphene systems with high carrier mobility