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We present electronic transport measurements on etched graphene nanoribbonson silicon dioxide before and after a short hydrouoric acid (HF) treatment. Wereport on changes in the transport properties, in particular, in terms of adecreasing transport gap and a reduced doping level after HF dipping.Interestingly, the effective energy gap is nearly unaffected by the HFtreatment. Additional measurements on a graphene nanoribbon with lateralgraphene gates support strong indications that the HF significantly modifiesthe edges of the investigated nanoribbons leading to a significantly reduceddisorder potential in these graphene nanostructures.

Reducing disorder in graphene nanoribbons by chemical edge modification