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Large-supercell tight-binding calculations are presented forGaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of3.125% and 12.5%. Our results highlight significant distortion of the valenceband states due to the alloy disorder. A large full-width-half-maximum (FWHM)is estimated in the ground state interband transition energy ($\approx$ 33 meV)at 3.125% Bi, consistent with recent photovoltage measurements for similar Bicompositions. Additionally, the alloy disorder effects are predicted to becomemore pronounced as the QW width is increased. However, they are less strong atthe higher Bi composition (12.5%) required for the design of temperature-stablelasers, with a calculated FWHM of $\approx$ 23.5 meV at $x$=12.5%.

Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi$_{x}$As$_{1-x}$/GaAs quantum wells