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We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi2O3 or a CeO2 target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO2 phase.

Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet