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We report on the current-induced magnetization switching of a three-terminalperpendicular magnetic tunnel junction by spin-orbit torque and the read-outusing the tunnelling magnetoresistance (TMR) effect. The device is composed ofa perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. Themagnetization of the bottom FeCoB layer can be switched reproducibly by theinjection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Talayer in the presence of an in-plane bias magnetic field, leading to thefull-scale change of the TMR signal. Our work demonstrates the proof of conceptof a perpendicular spin-orbit torque magnetic memory cell.

Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction